首页> 外国专利> REVERSE CONDUCTING INSULATED GATE POWER SEMICONDUCTOR DEVICE HAVING LOW CONDUCTION LOSSES

REVERSE CONDUCTING INSULATED GATE POWER SEMICONDUCTOR DEVICE HAVING LOW CONDUCTION LOSSES

机译:具有低传导损耗的反向导电绝缘栅功率半导体器件

摘要

A reverse conducting insulated gate power semiconductor device is provided which comprises a plurality of active unit cells (40) and a pilot diode unit cell (50) comprising a second conductivity type anode region (51) in direct contact with a first main electrode (21) and extending from a first main side (11) to a first depth (d1). Each active unit cell (40) comprises a first conductivity type first source layer (41a) in direct contact with the first main electrode (21), a second conductivity type base layer (42) and a first gate electrode (47a), which is separated from the first source layer (41a) and the second conductivity type base layer (42) by a first gate insulating layer (46a) to form a first field effect transistor structure. A lateral size (w) of the anode region (51) in an orthogonal projection onto a vertical plane perpendicular to the first main side (11) is equal to or less than 1 µm. On a first lateral side surface of the anode region (51) a first insulating layer (52a) is arranged and on an opposing second lateral side surface of the anode region (51) a second insulating layer (52b) is arranged. And a distance between the first insulating layer (52a) and the second insulating layer (52b) is equal to or less than 1 µm, the first insulating layer (52a) extending vertically from the first main side (11) to a second depth (d2), and the second insulating layer (52b) extending vertically from the first main side (11) to a third depth (d3), wherein the first depth (d1) is less than the second depth (d2) and less than the third depth (d3).
机译:提供了一种反向传导绝缘栅功率半导体器件,其包括多个有源单元电池(40)和包括与第一主电极(21)直接接触的第二导电类型阳极区域(51)的导通二极管单元电池(50)。 )并从第一主侧面(11)延伸到第一深度(d1)。每个有源单位单元(40)包括与第一主电极(21)直接接触的第一导电类型的第一源极层(41a),第二导电类型的基极层(42)和第一栅电极(47a),其通过第一栅极绝缘层(46a)与第一源极层(41a)和第二导电类型基极层(42)分离,以形成第一场效应晶体管结构。在垂直于第一主侧面(11)的垂直平面上的正交投影中,阳极区域(51)的横向尺寸(w)等于或小于1μm。在阳极区域(51)的第一侧面上配置有第一绝缘层(52a),在阳极区域(51)的相对的第二侧面上配置有第二绝缘层(52b)。并且第一绝缘层(52a)和第二绝缘层(52b)之间的距离等于或小于1μm,第一绝缘层(52a)从第一主侧面(11)垂直延伸到第二深度( d2),并且第二绝缘层(52b)从第一主侧面(11)垂直延伸到第三深度(d3),其中第一深度(d1)小于第二深度(d2)且小于第三深度深度(d3)。

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