Clustered insulated gate bipolar transistor: a new powersemiconductor device

摘要

For the first time, the authors demonstrated a new MOS gatednthyristor called the clustered insulated gate bipolar transistorn(CIGBT), which is formed by clustering power MOSFET cathode cells withinncommon n- and p-wells. The nand p-wells also provide a uniquenself-clamping feature that protects the cathode from any surge currentnor voltage and thus improve its safe operating area. Detailed electricalnsimulations of 3 kV structures derived directly from a process simulatornindicate at least 30% improvement in the on-state and switchingnperformance of the CIGBT in comparison to an IGBT