Method for Preparing Oxide Thin Transistor and Oxide Thin Transistor Prepared by Using the Same

摘要

The present invention, Forming a gate insulating film on the substrate on which the gate electrode is formed; Performing a plasma treatment process on the gate insulating film; Forming an oxide semiconductor thin film by applying an oxide semiconductor solution on the gate insulating film; Forming a source electrode and a drain electrode electrically connected to the oxide semiconductor thin film; An oxide thin film transistor manufacturing method and an oxide thin film transistor manufactured by the manufacturing method may include not only having excellent flatness and reliability, but also large-scale production of wafer units, and an oxide thin film transistor having excellent reproducibility through a batch process. to provide.