2- - Fabrication Methods for 2-Terminal Switching Device Having Bipolar Switching Property and Resistance Memory Cross-Point Array Having the Same

摘要

Provided are a two-terminal switching device having bidirectional switching characteristics and a method of manufacturing a resistive memory device cross-point array including the same. A method of manufacturing a two-terminal switching device includes forming a first conductive lower metal oxide semiconductor layer on a first electrode. A second conductivity type metal oxide semiconductor layer is formed on the first conductivity type lower metal oxide semiconductor layer. A first conductive upper metal oxide semiconductor layer is formed on the second conductive metal oxide semiconductor layer. A second electrode is formed on the first conductive upper metal oxide semiconductor layer.