Nonvolatile resistive switching memory device comprising halide perovskite material and manufacturing method for the same

摘要

A resistance change memory device including an anode, a cathode, and a resistance change layer provided between the anode and the cathode and having a variable resistance according to an applied voltage, wherein the resistance change layer is (A') ₂ A _n-1 B _n X _There is provided a resistance change memory device comprising a compound of the formula _3n+1 . (In the above formula, A'has an asymmetric structure and includes an ammonium group containing a phenyl group, A is a monovalent metal ion, X is a halogen ion, The A'has an asymmetric ion distribution that can be rotated by an applied electric field, n is a value between 1 and ∞)