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Nonvolatile resistive switching memory device comprising halide perovskite material and manufacturing method for the same
Nonvolatile resistive switching memory device comprising halide perovskite material and manufacturing method for the same
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机译:包含卤化钙钛矿材料的非易失性电阻式开关存储器件及其制造方法
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摘要
A resistance change memory device including an anode, a cathode, and a resistance change layer provided between the anode and the cathode and having a variable resistance according to an applied voltage, wherein the resistance change layer is (A')
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