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Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
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机译:包括一个开关装置和一种电阻材料的非易失性存储装置及其制造方法
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摘要
A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.
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