measuring device of the carrier lifetime of semiconductor using quasi-optical millimeter and terahertz and method thereof

摘要

Embodiments include an excitation light source for irradiating a semiconductor sample with excitation light having energy above a bandgap of the semiconductor sample; A light source for generating light of 100 GHz to 1 THz; A first antenna for modulating the light into a Gaussian beam; A mirror unit configured to provide the Gaussian beam to a region irradiated with the excitation light from the semiconductor sample; A second antenna through which the Gaussian beam passing through the mirror portion passes and reduces distortion of the Gaussian beam; And a detector configured to detect the intensity of the Gaussian beam passing through the second antenna. The semiconductor carrier lifetime measuring apparatus using a semi-optical millimeter and terahertz wave is disclosed.