首页> 外国专利> OPERATION METHOD FOR SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD FOR SEMICONDUCTOR MEMORY MODULE INCLUDING A PLURALITY OF SEMICONDUCTOR MEMORY DEVICE

OPERATION METHOD FOR SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD FOR SEMICONDUCTOR MEMORY MODULE INCLUDING A PLURALITY OF SEMICONDUCTOR MEMORY DEVICE

机译:半导体存储器的操作方法和包括多个半导体存储器的半导体存储器模块的操作方法

摘要

The present invention relates to a semiconductor memory device capable of performing a repair operation on its own, and a semiconductor memory module including the same, the method comprising: a method of operating a semiconductor memory device including a fuse array for storing at least one repair address; Additionally latching a repair address having an address value not stored in the fuse array in response to the active command in the operation mode, and inputting a repair entry control code externally applied in response to the first column command in the repair operation mode Whether to perform the operation is determined according to the receiving step and the value of the repair entry control code, and the latching repair address is ruptured to the fuse array in the latching in response to the second column command, and is applied after the second column command. Repair in response to precharge command Escape from the operating mode.
机译:技术领域本发明涉及一种能够自行执行修复操作的半导体存储器件以及包括该半导体存储模块的半导体存储模块,该方法包括:一种操作包括熔丝阵列的半导体存储器件的方法,该熔丝阵列用于存储至少一个修复。地址;另外,在操作模式下,响应于激活命令锁存具有未存储在熔丝阵列中的地址值的维修地址,并且在维修操作模式下,输入响应于第一列命令而外部施加的维修入口控制代码。根据接收步骤和修复入口控制码的值确定操作,并响应于第二列命令,将锁存修复地址中断到锁存器中的熔丝阵列,并在第二列命令之后应用。响应预充电命令进行维修退出操作模式。

著录项

  • 公开/公告号KR102087759B1

    专利类型

  • 公开/公告日2020-03-11

    原文格式PDF

  • 申请/专利权人 에스케이하이닉스 주식회사;

    申请/专利号KR20130132845

  • 发明设计人 황정태;

    申请日2013-11-04

  • 分类号G11C29;G11C29/04;G11C29/08;

  • 国家 KR

  • 入库时间 2022-08-21 11:05:06

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