Metal-Oxide-Nitride-Oxide-Semiconductor Memory Device with One-Side Halo Implantation to Enable Low-Voltage Operation Using Hot-Carrier Injection

摘要

We have developed a metal-oxide-nitride-oxide-semiconductor (MONOS) memory device with one-side halo implantation, in which programming and erasing are performed by channel-hot-electron injection and hot-hole injection, respectively. This MONOS memory has a simple structure and is fabricated through the conventional complementary metal-oxide-semiconductor (CMOS) process before the specific process for the memory device. A threshold voltage shift of more than 3.0 V, obtained through a programming operation, results in a threshold voltage greater than the programming gate voltage and is sufficient to enable the 10-year lifetime of this device.