首页> 外国专利> Decoding separate read and write addresses in the memory system to support simultaneous memory read and write operations

Decoding separate read and write addresses in the memory system to support simultaneous memory read and write operations

机译:解码存储系统中的单独读写地址,以支持同时进行的内存读写操作

摘要

Memory systems are disclosed that provide separate read and write address decoding to support simultaneous memory read and write operations. Separating read and write address decoding can avoid circuit conflicts for simultaneous memory read and write operations even when using single port memory bit cells. The read and write addresses of each read and write operation are decoded separately into read and write row and column selections driven by the memory array, so that simultaneous read and write operations are not affected by each other. To avoid circuit conflicts for simultaneous read and write operations, the memory system is configured to prioritize write row selection over read row selection to drive a row of memory bit cells in the memory array. In this way, the write operation will always be successful regardless of whether read and write row selection is for the same row.
机译:公开了提供分开的读和写地址解码以支持同时的存储器读和写操作的存储器系统。分开的读和写地址解码可以避免电路冲突,即使在使用单端口存储位单元时也可以进行同时的存储器读和写操作。每个读和写操作的读和写地址分别解码为由存储阵列驱动的读和写行和列选择,因此,同时进行的读和写操作不会互相影响。为了避免针对同时的读取和写入操作的电路冲突,存储系统被配置为优先于写入行选择优先于读取行选择,以驱动存储器阵列中的一行存储位单元。这样,无论读取和写入行选择是否针对同一行,写入操作将始终成功。

著录项

  • 公开/公告号KR102093143B1

    专利类型

  • 公开/公告日2020-03-25

    原文格式PDF

  • 申请/专利权人 퀄컴 인코포레이티드;

    申请/专利号KR20197009516

  • 发明设计人 가그 매니쉬;

    申请日2017-09-05

  • 分类号G11C11/418;G11C11/419;G11C7/10;G11C8/08;G11C8/10;

  • 国家 KR

  • 入库时间 2022-08-21 11:05:01

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