LOW TEMPERATURE COPPER BONDING METHOD AND COPPER BONDING PACKAGE THEREBY

摘要

The present invention relates to a low temperature copper bonding method and a copper bonding package thereby and, more particularly, to a copper bonding method for copper-to-copper (Cu-to-Cu) bonding between objects to be bonded which includes: a plasma treatment step of cleaning and activating a surface of a first copper layer formed on a first object to be bonded and a surface of a second copper layer formed on a second object to be bonded; an immersion step of absorbing antioxidant layers on the surfaces of the first copper layer and the second copper layer, respectively, by introducing the first object and the second object into a carbon hydroxyl (CxHy) gas atmosphere wherein x and y are natural numbers; aligning and placing the second object on the top of the first object; and performing copper-to-copper bonding at a bonded portion between the first object and the second object by desorbing the antioxidant layers by thermo-compressing the first object and the second object. Accordingly, the process is simplified due to the plasma treatment and the thermo-compression, electrical and thermal conductivity properties are excellent due to the bonded portion formed of copper, and the applicable fields are various due to the low temperature bonding process.;COPYRIGHT KIPO 2020