首页> 外国专利> A method of operating MLC memory device and MLC memory device

A method of operating MLC memory device and MLC memory device

机译:操作MLC存储设备的方法和MLC存储设备

摘要

The present invention relates to a method of operating a multi-level cell (MLC) memory device that performs a soft decision read operation. A method of reading a multi level cell (MLC) memory device connected to a memory controller according to an embodiment of the present invention is provided with a first read command, and a first hard decision read voltage and a first hard decision read voltage higher than Performs first and second hard decision read operations using 2 hard decision read voltages, reads first and second hard decision data, and reads one of the first and second hard decision read voltages. Reading the first soft decision data by selecting the decision read voltage and performing a first soft decision read operation using a plurality of soft decision read voltages having a predetermined voltage difference from the selected hard decision read voltage, The first soft decision data is provided to the memory controller to perform first ECC (error correction code) decoding.
机译:本发明涉及一种执行软判决读取操作的操作多级单元(MLC)存储设备的方法。根据本发明的实施例的读取连接到存储控制器的多级单元(MLC)存储设备的方法被提供有第一读取命令,并且第一硬判决读取电压和第一硬判决读取电压高于使用两个硬判决读取电压执行第一和第二硬判决读取操作,读取第一和第二硬判决数据,并读取第一和第二硬判决读取电压之一。通过选择判定读取电压并使用与所选择的硬判定读取电压具有预定电压差的多个软判定读取电压来执行第一软判定读取操作来读取第一软判定数据,将第一软判定数据提供给第一软判定数据。存储器控制器执行第一ECC(纠错码)解码。

著录项

  • 公开/公告号KR102123946B1

    专利类型

  • 公开/公告日2020-06-17

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR20120156742

  • 发明设计人 김경륜;윤상용;

    申请日2012-12-28

  • 分类号G11C16/34;G11C16/26;

  • 国家 KR

  • 入库时间 2022-08-21 11:04:26

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号