METHOD AND GATE RUCTURE FOR THRESHOLD VOLTAGE MODULATION IN TRANSISTORS

摘要

The present technology provides a structure capable of independently controlling the threshold voltages of the N-channel transistor and the P-channel transistor, and a method for manufacturing the semiconductor device. step; Forming a first stack layer including a first gate insulating layer and a first work function layer containing aluminum on the first gate insulating layer on the substrate of the PMOS region; A second stack layer including a second gate insulating layer, a threshold voltage control layer containing lanthanum on the second gate insulating layer, and a second work function layer on the threshold voltage control layer is formed on the substrate of the NMOS region. To do; And performing annealing to form a first dipole-interface by diffusion of the aluminum and a second dipole-interface by diffusion of the lanthanum, respectively, in the first gate insulating layer and the second gate insulating layer. Can.