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Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement

机译:具有非隔离式浮动金属栅极的双栅极铟镓锌氧化物薄膜晶体管,用于阈值电压调制和迁移率增强

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摘要

In this study, we propose a floating dual gate (FDG) indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (Φ) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (μ), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (V_(th)) from -5.0 to +7.9 V without an additional back gate power supply.
机译:在这项研究中,我们提出了一种浮置双栅(FDG)铟镓锌氧化物(IGZO)薄膜晶体管(TFT),其浮置金属背栅直接与IGZO接触而没有介电层。浮动背栅效应是通过改变背栅的功函数(Φ)来研究的。 FDG IGZO TFT具有改进的场效应迁移率(μ),不变的亚阈值摆幅(SS),高开/关电流比以及-5.0至+7.9 V的可调阈值电压(V_(th)),且无附加的后栅极电源。

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  • 来源
    《Applied Physics Letters》 |2011年第15期|p.153506.1-153506.3|共3页
  • 作者单位

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University,1001, Ta Hsueh Road, Hsinchu 300, Taiwan;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University,1001, Ta Hsueh Road, Hsinchu 300, Taiwan;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University,1001, Ta Hsueh Road, Hsinchu 300, Taiwan;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University,1001, Ta Hsueh Road, Hsinchu 300, Taiwan;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University,1001, Ta Hsueh Road, Hsinchu 300, Taiwan;

    Institute of Physics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 300, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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