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Large area VHF PECVD chamber for low-damage and high-throughput plasma processing
Large area VHF PECVD chamber for low-damage and high-throughput plasma processing
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机译:大面积VHF PECVD腔室,用于低损伤和高通量等离子体处理
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摘要
Embodiments disclosed herein generally relate to a plasma processing system for modifying the uniformity pattern of thin films deposited in a plasma processing chamber comprising at least one VHF power generator coupled to a diffuser in the plasma processing chamber. The feeding position offset of each VHF power generator and control of each VHF power generator through phase modulation and sweeping allows plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns caused by the chamber due to the standing wave effect. Power distribution between multiple VHF power generators coupled to the backing plate and/or disposed at different locations on the backing plate can be achieved by dynamic phase modulation between the VHF power applied to the different coupling points.
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