Self-aligned gate end-cover (SAGE) architecture with gate contacts

摘要

Self-aligned gate end cover (SAGE) architectures with gate contacts, and methods of fabricating SAGE architectures with gate contacts are described. In one example, an integrated circuit structure includes a gate structure over a semiconductor fin. A gate end cap isolation structure is laterally adjacent and in contact with the gate structure. A trench contact structure is over the semiconductor fin, with the gate end cap isolation structure laterally adjacent to and in contact with the trench contact structure. A local gate-to-contact connection that electrically connects the gate structure to the trench-contact structure.