首页> 外国专利> Radio frequency transistor for improving radio frequency switch performance, chip and mobile terminal

Radio frequency transistor for improving radio frequency switch performance, chip and mobile terminal

机译:用于改善射频开关性能的射频晶体管,芯片和移动终端

摘要

Disclosed are a radio frequency transistor for improving radio frequency switch performance, a chip and a mobile terminal. The radio frequency transistor comprises a first metal layer, a second metal layer, a polysilicon layer and an active area, the first metal layer being connected to the active area via contact holes, the first metal layer being connected to the second metal layer via through holes. The wiring direction of the second metal layer is perpendicular to the wiring direction of the polysilicon layer, thereby reducing parallel areas between the polysilicon layer and the first metal layer and decreasing the numbers of contact holes and through holes, so as to reduce the off capacitance. In addition, space saved by the first metal layer wiring and the contact holes is utilized, thereby increasing the channel width of the radio frequency transistor accommodated in a same chip area, and reducing the on-resistance.
机译:公开了一种用于改善射频开关性能的射频晶体管,芯片和移动终端。射频晶体管包括第一金属层,第二金属层,多晶硅层和有源区,第一金属层通过接触孔连接到有源区,第一金属层通过通孔连接到第二金属层。孔。第二金属层的布线方向垂直于多晶硅层的布线方向,从而减少了多晶硅层与第一金属层之间的平行面积,并减少了接触孔和通孔的数量,从而减小了截止电容。另外,利用了由第一金属层布线和接触孔节省的空间,从而增加了容纳在相同芯片面积中的射频晶体管的沟道宽度,并减小了导通电阻。

著录项

  • 公开/公告号GB202001828D0

    专利类型

  • 公开/公告日2020-03-25

    原文格式PDF

  • 申请/专利权人 VANCHIP (TIANJIN) TECHNOLOGY CO LTD;

    申请/专利号GB20200001828

  • 发明设计人

    申请日2018-07-01

  • 分类号H01L23/528;

  • 国家 GB

  • 入库时间 2022-08-21 11:00:02

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号