Hybrid insulated gate multi-structure and multi-material transistor

摘要

This document defines the characteristics of Hybrid Insulated Gate Multi-structure and multi-material Transistor, that is to say "Hybrid IGMT", as power electronics transistor. This transistor is characterized with a structure of internal conduction substrate composed of vertical channels, distinguishing between channels with high electrical conductivity and insulated channels. This peculiarity distinguishes Hybrid IGMT from any other power electronics transistor and brings many advantages, most of all the significant reduction, till absence, of switching losses. Within description a specific implementation of conductive channels is introduced, consisting in a composite structure called "Si // C", which allows the fulfillment of constant and very low conduction power losses in a wide operating electrical and thermal range. Hybrid IGMT is intended for application in vehicle electric traction, also in low-voltage or medium- voltage electric systems requiring DC-AC or AC-DC conversion with high stability, long operating life and low power losses.