Gate driver integrated circuit for high-current and high-speed insulated-gate bipolar transistors used in hybrid electric vehicle and electric vehicle inverters

摘要

We developed a gate driver IC that can power IGBTs of up to 500 amperes for HEVs and EVs. A newly developed Zener clamping circuit effectively suppressed the IGBT spike voltage in short circuit (SC) mode. The silicon-on-insulator (SOI) process was utilized to achieve high temperature operation and high surge protection.