Gate Driver Integrated Circuit for High-Current and High-Speed Insulated-Gate Bipolar Transistors used in Hybrid Electric Vehicle and Electric Vehicle Inverters

摘要

We developed a gate driver IC that can power IGBTs of up to 500 amperes for HEVs and EVs. A newly developed Zener clamping circuit effectively suppressed the IGBT spike voltage in short circuit (SC) mode. The silicon-on-insulator (SOI) process was utilized to achieve high temperature operation and high surge protection.