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Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

机译:热处理对化学气相沉积沉积在石墨基底上的非晶碳化硼涂层微观结构的影响

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摘要

A two-layer boron carbide coating is deposited on a graphite substrate by chemical vapor deposition from a CH4/BCl3/H-2 precursor mixture at a low temperature of 950 degrees C and a reduced pressure of 10 KPa. Coated substrates are annealed at 1600 degrees C, 1700 degrees C, 1800 degrees C, 1900 degrees C and 2000 degrees C in high purity argon for 2 h, respectively. Structural evolution of the coatings is explored by electron microscopy and spectroscopy. Results demonstrate that the as-deposited coating is composed of pyrolytic carbon and amorphous boron carbide. A composition gradient of B and C is induced in each deposition. After annealing, B4C crystallites precipitate out of the amorphous boron carbide and grow to several hundreds nanometers by receiving B and C from boron-doped pyrolytic carbon. Energy-dispersive spectroscopy proves that the crystallization is controlled by element diffusion activated by high temperature annealing, after that a larger concentration gradient of B and C is induced in the coating. Quantified Raman spectrum identifies a graphitization enhancement of pyrolytic carbon. Transmission electron microscopy exhibits an epitaxial growth of B4C at layer/layer interface of the annealed coatings. Mechanism concerning the structural evolution on the basis of the experimental results is proposed. (C) 2010 Elsevier B.V. All rights reserved.
机译:在950℃的低温和10 KPa的减压下,通过化学气相沉积法从CH4 / BCl3 / H-2前驱体混合物中在石墨基板上沉积两层碳化硼涂层。将涂覆的基板分别在高纯氩气中分别于1600摄氏度,1700摄氏度,1800摄氏度,1900摄氏度和2000摄氏度退火2小时。通过电子显微镜和光谱学研究涂层的结构演变。结果表明,所沉积的涂层由热解碳和非晶碳化硼组成。在每次沉积中都诱导出B和C的成分梯度。退火后,B4C晶体从无定形碳化硼中沉淀出来,并通过从掺硼的热解碳中吸收B和C来生长至数百纳米。能量色散光谱法证明,结晶是由高温退火激活的元素扩散控制的,然后在涂层中诱导出较大的B和C浓度梯度。定量拉曼光谱确定了热解碳的石墨化增强。透射电子显微镜在退火涂层的层/层界面处显示出B4C的外延生长。根据实验结果提出了结构演化的机理。 (C)2010 Elsevier B.V.保留所有权利。

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