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Magnetoresistive sensors based on the elasticity of domain walls

机译:基于畴壁弹性的磁阻传感器

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摘要

Magnetic sensors based on the magnetoresistance effects have a promisingapplication prospect due to their excellent sensitivity and advantages in termsof the integration. However, competition between higher sensitivity and largermeasuring range remains a problem. Here, we propose a novel mechanism for thedesign of magnetoresistive sensors: probing the perpendicular field bydetecting the expansion of the elastic magnetic Domain Wall (DW) in the freelayer of a spin valve or a magnetic tunnel junction. Performances of devicesbased on this mechanism, such as the sensitivity and the measuring range can betuned by manipulating the geometry of the device, without changing theintrinsic properties of the material, thus promising a higher integration leveland a better performance. The mechanism is theoretically explained based on theexperimental results. Two examples are proposed and their functionality andperformances are verified via micromagnetic simulation.
机译:基于磁阻效应的磁传感器具有出色的灵敏度和集成优势,具有广阔的应用前景。但是,更高的灵敏度和更大的测量范围之间的竞争仍然是一个问题。在这里,我们为磁阻传感器的设计提出了一种新颖的机制:通过检测旋转阀或磁隧道结的自由层中的弹性磁畴壁(DW)的膨胀来探测垂直场。可以通过操纵设备的几何形状来调整基于这种机制的设备的性能,例如灵敏度和测量范围,而无需改变材料的固有特性,从而有望获得更高的集成度和更好的性能。根据实验结果从理论上解释了该机理。提出了两个例子,并通过微磁仿真验证了它们的功能和性能。

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