MAGNETORESISTIVE ELEMENT BASED ON MAGNETIC DOMAIN WALL SHIFT BY PULSE CURRENT AND HIGH-SPEED MAGNETIC RECORDING DEVICE

摘要

It is possible to realize a magnetoresistive element and a solid state memory capable of performing high-speed magnetization inversion and having a low critical current density. The magnetoresistive element includes a first magnetization fixed layer, a magnetization free layer, and a second magnetization fixed layer. The first magnetization fixed layer is substantially antiparallel to the second magnetization fixed layer. Both transition regions between the first magnetization fixed layer and the magnetization free layer or between the second magnetization fixed layer and the magnetization free layer can trap the magnetic domain wall and the magnetic domain wall exists in one of them. A pulse current of a DC current of pulse width 1 ns with current density not exceeding 106 A/cm2 is supplied between the first and the second magnetization fixed layer.