Domain wall moving element, domain wall moving magnetic recording element and magnetic recording array

摘要

In this domain wall moving magnetic recording element (100), a first layer (11) containing a rare earth metal and a second layer (12) containing a transition metal are alternately laminated in the first direction (Z). The domain wall moving layer (10) is provided with a first electrode (21) and a second electrode (22) facing the domain wall moving layer and arranged apart from each other, and the domain wall moving layer is the first. It is located at any interface between the layer and the second layer, has a SOT suppressing portion (13) containing a non-magnetic metal, and the SOT suppressing portion is locally distributed at the interface.