PROBLEM TO BE SOLVED: To realize a magnetoresistance element capable of high-speed magnetization reversal and having low critical current density, and provide a solid memory.;SOLUTION: A magnetoresistance effect element comprises a first magnetization fixed layer, a magnetization free layer, and a second magnetization fixed layer. The first magnetization fixed layer is roughly anti-parallel to the second magnetization fixed layer. Both of transition regions between the first magnetization fixed layer and the magnetization free layer and between the second magnetization fixed layer and the magnetization free layer can trap magnetic domain walls, and there is provided a structure in which the magnetic domain wall exists in either one of them. Between the first and second magnetization fixed layers, pulse current having the DC current density with a pulse width of 1 ns that is a value not exceeding 106 A/cm2 is supplied.;COPYRIGHT: (C)2007,JPO&INPIT
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机译：解决的问题：实现能够高速反转磁化并且具有低临界电流密度的磁阻元件，并提供固态存储。解决方案：磁阻效应元件包括第一磁化固定层，磁化自由层和第一磁化固定层。第二磁化固定层。第一磁化固定层与第二磁化固定层大致反平行。第一磁化固定层和磁化自由层之间以及第二磁化固定层和磁化自由层之间的过渡区域都可以俘获磁畴壁，并且提供了其中磁畴壁存在于任一磁畴壁中的结构。他们。在第一和第二磁化固定层之间，具有直流电流密度且脉冲宽度为1 ns的脉冲电流为不超过10 6 A / cm 2 的值。版权：（C）2007，JPO＆INPIT
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