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A Fast Room-Temperature Poling Process of Piezoelectric Pb(Zr0.45Ti0.55)O3 Thin Films

机译:压电Pb(Zr0.45Ti0.55)O3薄膜的快速室温极化工艺

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摘要

The effect of two poling processes on the ferroelectric and piezoelectric properties of sol–gel and pulsedlaser-deposited Pb(Zr0.45Ti0.55)O3 (PZT) thin films has been investigated as a function of the poling field, poling temperature and poling time. In the case of dc-electric field poling at an elevated temperature (200 °C), the remnant polarization and effective piezoelectric coefficient are found to increase with and saturate at high dc-poling field (400 kV/cm) and long poling time (30 minutes). The room-temperature poling process using ac electric field poling, shows the same trend with poling field but much shorter poling times (100 seconds), with only a slightly lower saturation value of polarization. It is suggested that in room-temperature poling screening charges are merely rearranged, whereas in high temperature poling these charges are largely removed. A much larger improvement in the properties of sol–gel PZT thin films is found, as compared to those deposited using pulsed laser deposition (PLD), indicating that a poling process is required for sol–gel films.
机译:研究了两种极化过程对溶胶-凝胶和脉冲激光沉积Pb(Zr0.45Ti0.55)O3(PZT)薄膜的铁电和压电性能的影响,该函数与极化场,极化温度和极化时间有关。在高温(200°C)下进行直流电场极化的情况下,发现残留极化和有效压电系数会随着高直流极化电场(400 kV / cm)和较长极化时间而增加并饱和30分钟)。使用交流电场极化的室温极化过程显示出与极化电场相同的趋势,但极化时间短得多(100秒),而极化的饱和度值仅稍低。建议在室温极化筛选中仅重新排列电荷,而在高温极化中将这些电荷大部分除去。与使用脉冲激光沉积(PLD)沉积的薄膜相比,发现溶胶-凝胶PZT薄膜的性能有了更大的改善,这表明溶胶-凝胶薄膜需要极化处理。

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