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Large thermoelectric figure of merit in graphene layered devices at low temperature

机译：石墨烯分层器件中的大热电品质因数较低温度

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Olaya, Daniel; Hurtado-Morales, Mikel; Gomez, Daniel; Castaneda-Uribe, Octavio Alejandro; Juang, Zhen-Yu.; Hernandez, Yenny;
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1. Realizing high thermoelectric performance with comparable p- and n-type figure-of-merits in a graphene/h-BN superlattice monolayer [J] . Zizhen Zhou, Dengdong Fan, Huijun Liu Physical chemistry chemical physics: PCCP . 2019,第48期

机译：用Graphene / H-BN超晶格单层中的可比P-和N型艺术性实现高热电性能
2. Enhanced low temperature thermoelectric performance and weakly temperature-dependent figure-of-merit values of PbTe-PbSe solid solutions [J] . Fan Haotian, Su Taichao, Li Hongtao, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2016,第Null期

机译：PbTe-PbSe固溶体的增强的低温热电性能和与温度无关的品质因数值
3. High thermoelectric figure of merit in nanocrystalline polyaniline at low temperatures [J] . Nath Chandrani, Kumar Ashok, Kuo Yung-Kang, Applied Physics Letters . 2014,第13期

机译：低温下纳米晶聚苯胺的高热电性能
4. High thermoelectric figure of merit in devices made of vertically stacked graphene layers [C] . Nguyen V.Hung, Saint-Martin J., Dollfus P., International Conference on Simulation of Semiconductor Processes and Devices . 2015

机译：由垂直堆叠的石墨烯层制成的器件具有较高的热电性能
5. N- and P-type Nano Bismuth(antimony)tellurium(selenium) Alloy Materials with Enhanced Thermoelectric Figure of Merit and Device Performance. [D] . Chan, Tsung-ta Ethan. 2012

机译：具有增强的热电性能和器件性能的N型和P型纳米铋（锑）碲（硒）合金材料。
6. A bottom-up route to enhance thermoelectric figures of merit in graphene nanoribbons [O] . Hâldun Sevinçli, Cem Sevik, Tahir Çaın, -1

机译：自下而上的途径来增强石墨烯纳米带的热电性能
7. Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT [O] . Saha, Kamal K., Markussen, Troels, Thygesen, Kristian S., 2011

机译：多端单分子 - 石墨烯 - 纳米带热电具有栅极电压可调的品质因数ZT的器件

Large thermoelectric figure of merit in graphene layered devices at low temperature

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