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Spatial anisotropy of the exciton level in CaF$_2$ at 11.1 eV and its relation to the weak optical anisotropy at 157 nm

机译:CaF $ _2 $中激子能级的空间各向异性为11.1 eV及其   与157nm处的弱光学各向异性有关

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摘要

The energy level of the exciton around the $\Gamma$ point in CaF$_2$ at about11.1 eV was investigated by reflection measurements on oriented surfaces usingdispersed synchrotron radiation. A small but clear energy shift of the excitonresonance structure was observed which depends on the crystal orientation withrespect to the incoming beam. By interpreting the results in terms of thecomplex dielectric function it becomes possible to determin the respectiveexciton levels and lifetimes. For crystal samples oriented in the (111)direction, the exciton has an excitation energy 0.02 eV above the energy ofsamples oriented in the (100) direction. The results obtained suggest that theexciton-energy shift is related to the spatial anisotropy recently measured inCaF$_2$ at 157 nm.
机译:通过使用分散的同步加速器辐射在定向表面上进行反射测量,研究了CaF $ _2 $中$ \ Gamma $点附近的激子能级,大约为11.1 eV。观察到激子共振结构的小但清晰的能量位移,这取决于晶体相对于入射光束的取向。通过用复数介电函数解释结果,可以确定各自的激子水平和寿命。对于沿(111)方向取向的晶体样品,激子的激发能比沿(100)方向取向的样品的能量高0.02 eV。获得的结果表明,激子能量移动与最近在157 nm的CaF $ _2 $中测量到的空间各向异性有关。

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