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Indirect Magnetic-Field-Tuned Superconductor-Insulator Transitions and Weak Localization of Bosons of Quasi-Two Dimensional Metal Films

机译:间接磁场调谐超导体 - 绝缘体转换和   准二维金属薄膜的弱定位

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摘要

Magnetic field and electrostatically tuned superconductor-insulator (SI)transitions of ultrathin metal films with levels of disorder that place themnear the disorder-tuned SI transition appear to be direct, continuous quantumphase transitions. When films with lower levels of disorder are subjected to aperpendicular magnetic field, instead of a direct transition, a mixedsuperconductor-nonsuperconductor regime emerges at the lowest temperatures. Thezero temperature limit of the resistance is either insulating orsuperconducting, depending upon the value of the field, suggesting that thebehavior in this limit is governed by percolation physics. At high fields andlow temperatures, in the nominally insulating regime, the resistance ratherthan the conductance is found to be a logarithmic function of temperaturecorresponding to predicitons for the weak localization of bosons.
机译:具有无序度的超薄金属膜的磁场和静电调谐超导-绝缘体(SI)转变似乎是直接的,连续的量子相变,这种无序水平使无序调谐的SI转变变得明显。当具有较低无序水平的薄膜经受垂直磁场而不是直接跃迁时,混合超导体-非超导体机制会在最低温度下出现。电阻的零温度极限是绝缘的还是超导的,取决于磁场的值,这表明该极限的行为受渗流物理学的支配。在高电场和低温下,在名义上的绝缘状态下,电阻而不是电导是温度的对数函数,对应于玻色子弱定位的先决条件。

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