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Ion-beam modification of the magnetic properties of GaMnAs epilayers

机译:离子束修改Gamnas外延层的磁性

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摘要

We study the controlled introduction of defects in GaMnAs by irradiating thesamples with energetic ion beams, which modify the magnetic properties of theDMS. Our study focuses on the low-carrier-density regime, starting withas-grown GaMnAs films and decreasing even further the number of carriers,through a sequence of irradiation doses. We did a systematic study ofmagnetization as a function of temperature and of the irradiation ion dose. Wealso performed in-situ room temperature resistivity measurements as a functionof the ion dose. We observe that both magnetic and transport properties of thesamples can be experimentally manipulated by controlling the ion-beamparameters. For highly irradiated samples, the magnetic measurements indicatethe formation of magnetic clusters together with a transition to an insulatingstate. The experimental data are compared with mean-field calculations formagnetization. The independent control of disorder and carrier density in thecalculations allows further insight on the individual role of this two factorsin the ion-beam-induced modification of GaMnAs.
机译:我们通过用高能离子束照射样品来研究GaMnAs中缺陷的受控引入,从而改变了DMS的磁性能。我们的研究集中在低载流子密度方面,从生长的GaMnAs薄膜开始,并通过一系列辐照剂量进一步减少载流子的数量。我们对磁化强度随温度和辐照离子剂量的函数进行了系统的研究。我们还根据离子剂量进行了原位室温电阻率测量。我们观察到,可以通过控制离子束参数对样品的磁性和传输性质进行实验控制。对于高度辐照的样品,磁测量表明磁簇的形成以及向绝缘态的过渡。将实验数据与平均场计算进行磁化比较。计算中无序和载流子密度的独立控制,可以进一步了解这两个因素在离子束诱导的GaMnAs修饰中的作用。

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