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Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers

机译:弱耦合Gaas / alGaas多层膜的量子化霍尔相中扩展态的光谱证据

摘要

The influence of interlayer coupling on the formation of the quantized Hall phase at the filling factor nu=2 was studied in multilayer GaAs/AlGaAs heterostructures. The disorder broadened Gaussian photoluminescence line due to localized electrons was found in the quantized Hall phase of the isolated multi-quanturn-well structure. On the other hand, the quantized Hall phase of weakly coupled multilayers emitted an unexpected asymmetrical line similar to that observed in metallic electron systems. We demonstrated that the observed asymmetry is caused by the partial population of extended electron states formed in the insulating quantized Hall phase due to spin-assisted interlayer percolation. A sharp decrease in the single-particle scattering time associated with these extended states was observed for the filling factor nu=2. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2978194]
机译:研究了多层GaAs / AlGaAs异质结构中层间耦合对填充因子nu = 2时形成霍尔相的影响。在孤立的多量子阱结构的量化霍尔相中发现了由于局部电子导致的无序展宽的高斯光致发光线。另一方面,弱耦合多层的量化霍尔相发出了与金属电子系统相似的意外的不对称线。我们证明了观察到的不对称性是由于自旋辅助的层间渗滤在绝缘的量化霍尔相中形成的部分扩展电子态所致。对于填充因子nu = 2,观察到与这些扩展状态相关的单粒子散射时间的急剧减少。 (C)2008美国物理研究所。 [DOI:10.1063 / 1.2978194]

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