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Room temperature thermally evaporated thin Au film on Si suitable for application of thiol self-assembled monolayers in MEMS/NEMS sensors

机译:在si上室温热蒸发的薄au膜适合于在mEms / NEms传感器中应用硫醇自组装单层

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摘要

Gold is a standard surface for attachment of thiol-based self-assembled monolayers (SAMs). To achieve uniform defect free SAM coatings, which are essential for bio/chemical sensing applications, the gold surface must have low roughness, and be highly orientated. These requirements are normally achieved by either heating during Au deposition or post deposition Au surface annealing. This paper shows that room temperature deposited gold, can afford equivalent gold surfaces, if the gold deposition parameters are carefully controlled. This observation is an important result as heating (or annealing) of the deposited gold can have a detrimental effect on the mechanical properties of the silicon on which the gold is deposited used in microsensors. The paper presents the investigation of the morphology and crystalline structure of Au film prepared by thermal evaporation at room temperature on silicon. The effect of gold deposition rate is studied, and it is shown that by increasing the deposition rate from 0.02 nm s to 0.14 nm s the gold surface RMS roughness decreases, whereas the grain size of the deposited gold is seen to follow a step function decreasing suddenly between 0.06 and 0.10 nm s. The XRD intensity of the preferentially [111] orientated gold crystallites is also seen to increase as the deposition rate increases up to a deposition rate of 0.14 nm s. Formation and characterization of 1-dodecanethiol on these Au coated samples is also studied using contact angle. It is shown that by increasing the Au deposition rate the contact angle hysteresis (CAH) decreases until it plateaus, for a deposition rate greater than 0.14 nm s, where the CAH is smaller than 9 degrees which is an indication of homogeneous SAM formation, on a smooth surface.
机译:金是用于附着基于硫醇的自组装单分子膜(SAMs)的标准表面。为了获得对生物/化学传感应用必不可少的均匀无缺陷的SAM涂层,金表面必须具有较低的粗糙度,并且必须高度定向。这些要求通常通过在金沉积期间或在金沉积后的表面退火中加热来实现。本文表明,如果仔细控制金沉积参数,则室温沉积的金可以提供等效的金表面。该观察结果是重要的结果,因为沉积的金的加热(或退火)可能会对微传感器中使用的沉积金的硅的机械性能产生不利影响。本文对室温下在硅上热蒸发制备的金膜的形貌和晶体结构进行了研究。研究了金沉积速率的影响,结果表明,通过将沉积速率从0.02 nm s增加到0.14 nm s,金表面的RMS粗糙度降低,而沉积金的晶粒尺寸遵循阶跃函数减小突然在0.06至0.10 nm s之间。随着沉积速率增加到高达0.14 nm s,优先[111]取向金微晶的XRD强度也增加了。还使用接触角研究了在这些Au涂层样品上1-十二烷硫醇的形成和表征。结果表明,通过增加Au沉积速率,接触角磁滞(CAH)减小直至稳定,对于大于0.14 nm s的沉积速率,其中CAH小于9度,这表明均匀的SAM形成。光滑的表面。

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