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Femtosecond multi-level phase switching in chalcogenide thin films for all-optical data and image processing

机译:用于全光学数据和图像处理的硫属化物薄膜中的飞秒多级相位切换

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摘要

We report on the non-volatile switching of amorphous chalcogenide glass thin films to the crystalline phase through a through a number of reproducible, discrete, optically distinguishable intermediate states, and on the re-amorphization of these films using femtosecond laser pulses. Potential applications lie in high-base (binary) all-optical signal modulation, high-density data storage, image processing and non-Von Neuman computing. Chalcogenide phase-change media such as Ge2Sb2Te5 (GST) are commercially established as a platform for both optical and electronic data storage (re-writable CDs, DVDs and Blu-Ray discs; Phase-change RAM). These technologies harness non-volatile amorphous-crystalline (binary) transitions in the chalcogenide induced by nanosecond optical or electronic excitations, which have also recently been applied to the realization of metamaterial electro- and all-optical transmission/reflection modulators for near- to mid-IR wavelengths providing switching high-contrast in device structures only a fraction of a wavelength thick. But chalcogenides offer a much richer pallet of transitional behaviours that can be exploited to enhance all of these functionalities and to open up new computational and image processing paradigms: They retain a 'memory' of sub-threshold excitations, such that transitions ordinarily initiated by single excitation pulses can be reproducibly stimulated by sequences of arbitrarily timed shorter/lower energy pulses cumulatively delivering the required energy. Here we demonstrate multi-level switching of GST films down to 30 nm thick using femtosecond optical pulses. Domains ranging in size from 200 down to 1 µm2 are progressively converted through at least eight distinct partially crystalline states using 85 fs pulses. Intermediate states are distinguished and their progressively changing optical properties characterised using white light reflectivity, transmission/reflection microspectrophotometry and spectroscopic ellipsometry measurements. Applications potential is demonstrated to high-density data storage - encoding/read-out of multiple bits per (semi-)crystalline mark with micron-level pixellation, the performance of optical arithmetic operations, and progressive tuning of chalcogenide hybrid metamaterial resonances
机译:我们报告了通过一系列可复制,离散,光学上可区分的中间状态将非晶硫族化物玻璃薄膜非结晶性转变为结晶相的情况,并报道了使用飞秒激光脉冲对这些薄膜的重新非晶化。潜在的应用领域包括高基数(>二进制)全光信号调制,高密度数据存储,图像处理和非冯·诺伊曼计算。商业上已建立了诸如Ge2Sb2Te5(GST)之类的硫族化物相变介质,作为光学和电子数据存储(可重写CD,DVD和Blu-Ray光盘;相变RAM)的平台。这些技术利用了纳秒级光学或电子激发在硫族化物中产生的非易失性非晶态晶体(二元)跃迁,最近还被用于实现超材料的电光和全光透射/反射调制器,用于近中或中等波长-IR波长在器件结构中提供了高对比度的切换,仅是波长厚度的一小部分。但是硫属元素化物提供了更为丰富的过渡行为,可以用来增强所有这些功能并开拓新的计算和图像处理范式:它们保留了亚阈值激发的“记忆”,因此通常由单个激发引发跃迁。激励脉冲可以通过累积任意地累积所需能量的任意时间较短/较低能量脉冲的序列可重复地激发。在这里,我们演示了使用飞秒光脉冲对厚度小于30 nm的GST薄膜进行多级切换。使用85 fs脉冲,通过至少八个不同的部分结晶状态,逐渐将大小从200到1 µm2的畴进行转换。使用白光反射率,透射/反射显微分光光度法和椭圆偏振光谱法测量,可以区分中间状态,并表征其逐渐变化的光学特性。展示了在高密度数据存储中的应用潜力-每个(半)晶体标记具有微米级像素化的多个位的编码/读出,光学算术运算的性能以及硫族化物混合超材料共振的逐步调谐

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