Field-effect transistors based on amorphous black phosphorus ultrathin films by pulsed laser deposition

摘要

Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.