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CuxSnSx+1 (x = 2, 3) thin films grown by sulfurization of metallic precursors deposited by dc magnetron sputtering

机译:CuxSnSx + 1(x = 2,3)薄膜是通过直流磁控溅射沉积的金属前驱物硫化而形成的

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摘要

We report the results of the growth of Cu-Sn-S ternarychalcogenide compounds by sulfurization of dc magnetronsputtered metallic precursors. Tetragonal Cu2SnS3forms for a maximum sulfurization temperature of 350 ºC.Cubic Cu2SnS3 is obtained at sulfurization temperaturesabove 400 ºC. These results are supported by XRDanalysis and Raman spectroscopy measurements. The latteranalysis shows peaks at 336 cm-1, 351 cm-1 fortetragonal Cu2SnS3, and 303 cm-1, 355 cm-1 for cubicCu2SnS3. Optical analysis shows that this phase changelowers the band gap from 1.35 eV to 0.98 eV. At highersulfurization temperatures increased loss of Sn is expectedin the sulphide form. As a consequence, higher Cucontent ternary compounds like Cu3SnS4 grow. In theseconditions, XRD and Raman analysis only detected orthorhombic(Pmn21) phase (petrukite). This compoundhas Raman peaks at 318 cm-1, 348 cm-1 and 295 cm-1. Fora sulfurization temperature of 450 ºC the samples presenta multi-phase structure mainly composed by cubicCu2SnS3 and orthorhombic (Pmn21) Cu3SnS4. For highertemperatures, the samples are single phase and constitutedby orthorhombic (Pmn21) Cu3SnS4. Transmittanceand reflectance measurements were used to estimate aband gap of 1.60 eV. For comparison we also include theresults for Cu2ZnSnS4 obtained using similar growth conditions.
机译:我们报告了硫化的直流磁控溅射金属前驱体生长的Cu-Sn-S三元硫属化合物的结果。四角形的Cu2SnS3形成的最高硫化温度为350ºC。在Cu的最高硫化温度为400ºC时可获得立方晶的Cu2SnS3。这些结果得到XRD分析和拉曼光谱测量的支持。后分析显示四方Cu2SnS3的峰在336 cm-1、351 cm-1,立方Cu2SnS3的峰在303 cm-1、355 cm-1。光学分析表明,该相变将带隙从1.35 eV降低到0.98 eV。在较高的硫化温度下,预计硫化物形式的Sn损失会增加。结果,诸如Cu 3 SnS 4的较高Cu含量的三元化合物生长。在这些条件下,XRD和拉曼分析仅检测到正交晶相(Pmn21)(petrukite)。该化合物的拉曼峰在318 cm-1、348 cm-1和295 cm-1处。硫化温度为450ºC时,样品呈现多相结构,主要由立方晶Cu2SnS3和正交晶(Pmn21)Cu3SnS4组成。对于更高的温度,样品是单相的,并且由正交晶(Pmn21)Cu3SnS4组成。使用透射率和反射率测量来估计1.60 eV的带隙。为了进行比较,我们还包括使用相似生长条件获得的Cu2ZnSnS4的结果。

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