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Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications

机译：铁电场效应晶体管的缩放比例和非易失性存储器应用的编程概念

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Fitsilis Michael;
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1. Characteristics of MoS2 monolayer non-volatile memory field effect transistors affected by the ferroelectric properties of BiFeO3 thin films with Pt and SrRuO3 bottom electrodes grown on glass substrates [J] . Shin Hyun Wook, Son J. Y. Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2019,第期

机译：受玻璃基板上生长的PT和Srruo3底电极的BifeO3薄膜铁电特性影响的MOS2单层非易失性存储场效应晶体管的特点
2. High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer [J] . Wang Yu, Kizu Takio, Song Lei, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2016,第34期

机译：使用非晶氧化物半导体和铁电聚合物的高性能非易失性场效应晶体管存储器
3. Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric [J] . Saeidi A., Biswas A., Ionescu Adrian M. Solid-State Electronics . 2016,第octa期

机译：以掺硅氧化ha为栅介质的低功率铁电非易失性存储隧道场效应晶体管的建模与仿真
4. Non-Volatile Memory utilizing Reconfigurable Ferroelectric Transistors to enable Differential Read and Energy-Efficient In-Memory Computation [C] . Sandeep Krishna Thirumala, Shubham Jain, Anand Raghunathan, IEEE/ACM International Symposium on Low Power Electronics and Design . 2019

机译：利用可重配置铁电晶体管的非易失性存储器实现差分读取和节能型内存中计算
5. Ferroelectric bismuth-layered SBT and metal/ferroelectric/insulator/silicon transistor for memory applications. [D] . Han, Jin-Ping. 2002

机译：用于存储器应用的铁电铋层SBT和金属/铁电/绝缘体/硅晶体管。
6. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [O] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, -1

机译：基于Ω型栅极有机铁电P（VDF-TrFE）场效应晶体管的低可编程电压非易失性存储器件使用p型硅纳米线通道
7. Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric [O] . A. Saeidi, A. Biswas, Adrian M. Ionescu 2016

机译：低功率铁电非易失性存储器隧道场效应晶体管的建模与仿真使用硅掺杂氧化铪作为栅极电介质

Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications

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