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On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance per Carrier RK= h/q^2

机译:两端子设备中没有载流子漂移及其每载流子最低电阻的起源RK = h / q ^ 2

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摘要

After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum resistance RK/(2pi)
机译:在对当今电阻器中的电噪声模型提出批评之后,我们通过了基于复杂导纳中电荷离散性的量子兼容模型。从这个新模型中我们可以看出,载流子漂移被看作是响应电场的带电粒子运动,在固态器件的主体区域中载流子会以偶极子的形式对电场进行反应,而这种情况不大可能发生。不存在会产生电阻漂移电荷的散粒噪声,以及LC振荡器谐振器中存在的有功功率会产生相位噪声,这是在没有载流子漂移的情况下该传导模型的两个附加证明:两端子设备变得分立,每个载流子的最小值为量子电阻RK /(2pi)

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