Fluorinated polyimide-silica films with low permittivity and low dielectric loss

摘要

A sol-gel process was used to prepare polyimide-silica hybrid films from the fluorinated polyimide precursors (6FDA-ODA) and tetraethylorthosilicate (TEOS) in N,N-dimethyl acetamide. The hybrid film was then treated with hydrofluoric acid to remove the dispersed silica particles, leaving inside the film pores with diameters ranged from 80 nm to 1 lm, which depended on the size of the silica particles. The chemical structures and morphology of the hybrid and porous films were characterized by Fourier transform infrared spectroscopy and scanning electron microscopy, respectively. The synthesized porous fluorinated polyimide films show low relative dielectric permittivity of 1.9, rendering them promising for microelectronic packaging materials.