A 5 watt wideband power amplifier using a SiCudMESFET has been designed. The frequency range coversud10 MHz to 2.4 GHz with small-signal gain of 8 dB. Audbroadband choke structure with a new technique wasuddeveloped to obtain good isolation and low loss over theuddesired bandwidth. Input and output matching networks andudshunt feedback topology were introduced to increase theudbandwidth. At VDS= 30 V and IDS = 500 mA, powerudperformance measurements with PAE of almost 35%, anudoutput power of ≥ 37 dBm and 8 dB power gain over theudoperating bandwidth were achieved. Two-tone measurementsudat frequency spacing of 200 kHz were also done and OIP2 andudOIP3 of 76 dBm and 49 dBm, respectively, were obtained.udFinally, AM/AM and AM/PM distortions were measured andudthe results are discussed.
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