首页> 外文OA文献 >Pulsed electrodeposition of Cuinse2 thin films with morphology for solar cell applications
【2h】

Pulsed electrodeposition of Cuinse2 thin films with morphology for solar cell applications

机译:具有形态的Cuinse2薄膜的脉冲电沉积在太阳能电池中的应用

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Copper indium diselenide (CuInSe2) films have been prepared by pulse electrodeposition technique on Molybdenum substrate followed by post-deposition annealing at 550°C. Optimization of pulse parameters by varying the pulse duration (duty cycle) in order to achieve high quality films has been reported. Appropriate manipulation of pulse parameters has resulted in a novel flake-like crystallite morphology and better control over the composition of individual elements. The CIS thin films were comprehensively characterized using SEM-EDS, FIB, XRD and UV-DRS to study their morphology, phase constitution, etc. and PEC (photoelectrochemistry) measurements were also carried out to ascertain the photoelectrochemical performance of the CIS absorber layer. The bandgap of the CIS films was determined to be 1.02 eV. The flake like crystallite morphology observed in CIS thin films under the optimized processing conditions was found to yield enhanced cathodic photoresponse under solar simulated light with a photocurrent density of 20 μA/cm2 (observed at a potential of -0.6 V vs. SCE). The films exhibited a photoresponse typical of a p-type semiconductor
机译:铜铟二硒化物(CuInSe2)膜是通过脉冲电沉积技术在钼衬底上制备的,然后在550°C下进行后沉积退火。已经报道了通过改变脉冲持续时间(占空比)来优化脉冲参数以获得高质量的胶片。适当地控制脉冲参数可产生新颖的片状微晶形态,并能更好地控制单个元素的组成。利用SEM-EDS,FIB,XRD和UV-DRS对CIS薄膜进行了全面表征,以研究其形貌,相组成等。还进行了PEC(光电化学)测量,以确定CIS吸收层的光电化学性能。 CIS膜的带隙确定为1.02eV。发现在优化处理条件下在CIS薄膜中观察到的片状微晶形态在太阳模拟光下产生增强的阴极光响应,光电流密度为20μA/ cm2(在-0.6 V对SCE的条件下观察到)。薄膜表现出典型的p型半导体的光响应

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号