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Critical study of the vertical-cavity surface emitting laser electrical access for integrated optical sub-assembly

机译:集成光学子组件的垂直腔面发射激光电通路的关键研究

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摘要

The proposal contribution aims at highlighting the consequence of the impedance mismatching in Vertical-Cavity Surface-Emitting laser (VCSEL)-based optical subassembly for optical interconnection applications. The integration of this micro laser diode needs a particular care to avoid electromagnetic coupling which could transform the advantage of the VCSEL technology in a weakness. Indeed, the vertical emission perpendicular to the active layer gives the possibility to achieve the need of planarization of the optoelectronic circuits and the design of VCSEL arrays. That is why it is of great interest to develop an optoelectronic model including the electrical access effect. This model is based on the VCSEL rate equation comparison with a behavioural small-signal equivalent circuit. Scattering parameters of various VCSEL structures and various VCSEL chip submounts are tested. This characterization allows the validation of the laser model and emphasizes the influence of the electrical access in the light transmission. In a particular VCSEL array structure, a crosstalk phenomenon is also observed. In other cases, the frequency rise involves modification of the laser frequency response. Consequently the electrical access of the VCSEL needs to be improved in order to avoid an inadequate utilization of the VCSEL.
机译:提案贡献旨在突出用于光学互连应用的基于垂直腔表面发射激光器(VCSEL)的光学子组件中阻抗不匹配的后果。微型激光二极管的集成需要特别注意避免电磁耦合,电磁耦合可能会弱化VCSEL技术的优势。实际上,垂直于有源层的垂直发射使实现光电电路平面化和VCSEL阵列设计的需求成为可能。这就是为什么开发包含电访问效应的光电模型引起极大兴趣的原因。该模型基于VCSEL速率方程与行为小信号等效电路的比较。测试了各种VCSEL结构和各种VCSEL芯片底座的散射参数。这种表征可以验证激光模型,并强调电传输对光传输的影响。在特定的VCSEL阵列结构中,还会观察到串扰现象。在其他情况下,频率上升涉及修改激光频率响应。因此,需要改善VCSEL的电通路,以避免VCSEL的利用不足。

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