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SnO2 coated Ni particles prepared by fluidized bed chemicaludvapor deposition

机译:流化床化学法制备SnO2包覆的Ni颗粒气相沉积

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摘要

A Fluidized Bed Metal–Organic Chemical Vapor Deposition (FB-MOCVD) process was developed for the growth of tin oxide thin films on large hollow Ni particles. Tetraethyl tin was used as tin source and dry air both as fluidization gas and oxidant reagent. The SnO2 films were grown in a FBCVD reactor under reduced pressure (13.3 kPa) in the temperature range of 633–663 K. A series of specific experiments was carried out to optimize the design of the reactor and to determine the range of experimental parameters (flow rate, pressure, temperature) leading to good fluidization of the large hollow Ni particles used as base material. The SnO2 films deposited on particles exhibited a dense nodular surface morphology similar to that previously observed on flat substrates. The relative thickness of the films was determined by EDS analyses and the real values were measured by SEM on cross-sections of particles. The SnO2 films exhibit satisfactory thickness uniformity from one particle to another in the same batch and from run to run. XRD studies revealed that the films exhibited good crystallinity with the cassiterite structure. Traces of NiO were found at the SnO2/Ni interface. Finally, the SnO2 CVD coated-Ni particles were used as anodes in an electrochemical cell. The potential limit of oxygen evolution measured was that of the SnO2 layer despite the initial porosity of the hollow Ni particles inherent to their preparation. This work is the first step towards the preparation of high specific surface area electrodes.
机译:开发了一种流化床金属有机化学气相沉积(FB-MOCVD)工艺,用于在大型空心Ni颗粒上生长氧化锡薄膜。四乙基锡用作锡源,干燥空气用作流化气体和氧化剂。 SnO2膜在FBCVD反应器中在633-663 K的减压范围内(13.3 kPa)生长。进行了一系列具体实验,以优化反应器的设计并确定实验参数的范围(流量,压力,温度)导致用作基材的大空心Ni颗粒良好的流态化。沉积在颗粒上的SnO2膜表现出致密的结节状表面形态,类似于先前在平坦基板上观察到的形态。膜的相对厚度通过EDS分析确定,并且真实值通过SEM在颗粒的横截面上测量。 SnO2膜在同一批次中以及从一个批次到另一个批次,从一个颗粒到另一个颗粒都显示出令人满意的厚度均匀性。 XRD研究表明该膜具有锡石结构的良好结晶性。在SnO2 / Ni界面处发现了NiO的痕迹。最后,将SnO2 CVD涂覆的Ni颗粒用作电化学电池中的阳极。尽管中空Ni颗粒的初始孔隙率是其制备所固有的,但测得的析出氧的潜在极限是SnO2层的极限。这项工作是制备高比表面积电极的第一步。

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