Deposition of silicon carbide (SiC) coatings from compounds such as methyltrichlorosilane (CH sub 3 SiCl sub 3 ) results in corrosive chlorine-containing byproducts. The feasibility of depositing coatings from SiH sub 4 and Si(CH sub 3 ) sub 4 , which contain no chlorine, was briefly studied. Coatings of SiC were deposited from Si(CH sub 3 ) sub 4 over the temperature range 1025 to 1525 exp 0 C in beds of particles fluidized with either H sub 2 or Ar. The densest coatings were deposited at 1025 exp 0 C, but none approached the theoretical density of SiC. A SiC coating was also deposited at 800 exp 0 C from a mixture of SiH sub 4 , C sub 2 H sub 4 , and H sub 2 . (ERA citation 03:030359)
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