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Baseband analog circuits in deep-submicron cmos technologies targeted for mobile multimedia

机译:适用于移动多媒体的深亚微米cmos技术中的基带模拟电路

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摘要

Three main analog circuit building blocks that are important for a mixed-signalsystem are investigated in this work. New building blocks with emphasis on powerefficiency and compatibility with deep-submicron technology are proposed andexperimental results from prototype integrated circuits are presented.Firstly, a 1.1GHz, 5th order, active-LC, Butterworth wideband equalizer thatcontrols inter-symbol interference and provides anti-alias filtering for the subsequentanalog to digital converter is presented. The equalizer design is based on a new seriesLC resonator biquad whose power efficiency is analytically shown to be better than aconventional Gm-C biquad. A prototype equalizer is fabricated in a standard 0.18?mCMOS technology. It is experimentally verified to achieve an equalization gainprogrammable over a 0-23dB range, 47dB SNR and -48dB IM3 while consuming 72mWof power. This corresponds to more than 7 times improvement in power efficiency overconventional Gm-C equalizers.Secondly, a load capacitance aware compensation for 3-stage amplifiers ispresented. A class-AB 16W headphone driver designed using this scheme in 130nm technology is experimentally shown to handle 1pF to 22nF capacitive load whileconsuming as low as 1.2mW of quiescent power. It can deliver a maximum RMS powerof 20mW to the load with -84.8dB THD and 92dB peak SNR, and it occupies a smallarea of 0.1mm2. The power consumption is reduced by about 10 times compared todrivers that can support such a wide range of capacitive loads.Thirdly, a novel approach to design of ADC in deep-submicron technology isdescribed. The presented technique enables the usage of time-to-digital converter (TDC)in a delta-sigma modulator in a manner that takes advantage of its high timing precisionwhile noise-shaping the error due to its limited time resolution. A prototype ADCdesigned based on this deep-submicron technology friendly architecture was fabricatedin a 65nm digital CMOS technology. The ADC is experimentally shown to achieve68dB dynamic range in 20MHz signal bandwidth while consuming 10.5mW of power. Itis projected to reduce power and improve speed with technology scaling.
机译:在这项工作中,对混合信号系统重要的三个主要模拟电路构建模块进行了研究。提出了强调能效和与深亚微米技术兼容的新构建块,并给出了原型集成电路的实验结果。首先,它是一个1.1GHz,5阶,有源LC,Butterworth宽带均衡器,用于控制符号间干扰并提供抗干扰能力。提出了后续模数转换器的别名滤波。均衡器设计基于新的串联LC谐振器双二阶,其功率效率在分析上显示出优于常规Gm-C双二阶。原型均衡器采用标准的0.18?mCMOS技术制造。经过实验验证,它可以在0-23dB范围,47dB SNR和-48dB IM3上实现可编程的均衡增益,同时消耗72mW的功率。与传统的Gm-C均衡器相比,这相当于电源效率提高了7倍以上。其次,提出了针对3级放大器的负载电容感知补偿。实验证明,使用130nm技术的该方案设计的AB类16W耳机驱动器可处理1pF至22nF的电容性负载,而静态功耗低至1.2mW。它可以以-84.8dB的THD和92dB的峰值SNR向负载提供20mW的最大RMS功率,并且占地面积仅为0.1mm2。与可支持如此宽容性负载的驱动器相比,功耗降低了约10倍。第三,介绍了一种深亚微米技术中ADC设计的新颖方法。所提出的技术使得可以在三角积分调制器中使用时间数字转换器(TDC),该方式利用了其高定时精度,同时由于其有限的时间分辨率而对误差进行了噪声整形。基于这种深亚微米技术友好架构设计的ADC原型是在65nm数字CMOS技术中制造的。实验表明,该ADC在20MHz信号带宽内可实现68dB的动态范围,同时消耗10.5mW的功率。预计它将通过技术扩展来降低功耗并提高速度。

著录项

  • 作者

    Dhanasekaran Vijayakumar;

  • 作者单位
  • 年度 2009
  • 总页数
  • 原文格式 PDF
  • 正文语种 en_US
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