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Electrodeposition of p-Type Sb2Te3 Films and Micro-Pillar Arrays in a Multi-Channel Glass Template

机译:多通道玻璃模板中P型SB2TE3薄膜和微柱阵列的电沉积

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摘要

Antimony telluride (Sb2Te3)-based two-dimensional films and micro-pillar arrays are fabricated by electrochemical deposition from electrolytes containing SbO+ and HTeO2+ on Si wafer-based Pt electrode and multi-channel glass templates, respectively. The results indicate that the addition of tartaric acid increases the solubility of SbO+ in acidic solution. The compositions of deposits depend on the electrolyte concentration, and the micro morphologies rely on the reduction potential. Regarding the electrolyte containing 8 mM of SbO+ and 12 mM of HTeO2+, the grain size increases and the density of films decreases as the deposition potential shifts from −100 mV to −400 mV. Sb2Te3 film with nominal composition and dense morphology can be obtained by using a deposition potential of −300 mV. However, this condition is not suitable for the deposition of Sb2Te3 micro-pillar arrays on the multi-channel glass templates because of its drastic concentration polarization. Nevertheless, it is found that the pulsed voltage deposition is an effective way to solve this problem. A deposition potential of −280 mV and a dissolve potential of 500 mV were selected, and the deposition of micro-pillars in a large aspect ratio and at high density can be realized. The deposition technology can be further applied in the fabrication of micro-TEGs with large output voltage and power.
机译:基于含有Si +和HTeO2 +的电解质的基于Si晶片基Pt电极和多通道玻璃模板,通过电化学沉积通过电化学沉积来制造锑碲化物(Sb2te3)的二维膜和微柱阵列。结果表明酒石酸的添加增加了SbO +在酸性溶液中的溶解度。沉积物的组合物取决于电解质浓度,微观形态依赖于减少电位。关于含有8mm的HTeO2 +和12mm的含有8mm的电解质,晶粒尺寸的增加并且薄膜的密度随着沉积电位从-100mV转移到-400 mV而降低。通过使用-300mV的沉积电位,可以获得具有标称组成和致密形态的Sb2te3膜。然而,由于其剧烈浓度极化,该条件不适用于在多通道玻璃模板上沉积SB2Te3微柱阵列。然而,发现脉冲电压沉积是解决这个问题的有效方法。选择-280mV的沉积电位和500mV的溶解电位,并且可以实现在大纵横比和高密度处的微柱沉积。沉积技术可以进一步应用于具有大输出电压和功率的微型TEG的制造中。

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