The results of experimental researches of photoluminescence (PL) spectra inudSi nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structuresudwith high-temperature (1100 °C) and following low-temperature annealings in variousudregimes are given. We have found that additional low-temperature treatments in definiteudregimes result in substantial increase of the PL intensity, thus a maximum effect isudobserved after annealing in air. The possible mechanisms of the obtained effects areuddiscussed. Those are based on supposition about the dominating contribution ofudluminescence through the electronic states on SiO₂-Si nanoclaster interfaces, which isudrelated to defect and impurity complexes. It has been shown that growth of the PLudintensity is governed by two effects: generation of new centers of radiativeudrecombination on the nanocrystal-dielectric matrix interfaces, and passivation of nonradiativeudrecombination centers.
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