The process of chemical polishing the undoped and doped ZnSe crystalsudsurface with H₂O₂ – HBr etchants has been studied. The dependence of the samplesudpolishing rate on the concentration of H₂O₂ in HBr solution has been investigated.udSurface states after chemical etching have been established using electron and atomicudforce microscopies, and it was shown that the surface state is improved after chemicaludetching. Etchant selection to develop slow polishing compositions for chemicalmechanicaludpolishing the investigated materials has been made. Concentration regions ofudpolishing solutions have been found for various types of ZnSe surface treatment: toudremove the damaged layer, to control the etching rate, to obtain samples of a givenudthickness.
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机译：研究了用H 2 O 2-HBr蚀刻剂化学抛光未掺杂和掺杂的ZnSe晶体的表面的过程。研究了样品抛光速率对HBr溶液中H 2 O 2浓度的依赖性。 ud使用电子和原子显微技术建立了化学蚀刻后的表面状态，表明化学处理后表面状态得到了改善。拉线。已经选择了用于开发用于化学机械抛光的慢抛光组合物的蚀刻剂。已经发现用于各种类型的ZnSe表面处理的抛光溶液的浓度区域：去除去除受损的层，以控制蚀刻速率，以获得给定厚度的样品。
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