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An Improved CMOS Design of Op-Amp Comparator with Gain Boosting Technique for Data Converter Circuits

机译:具有数据转换器电路增益升压技术的OP-AMP比较器的改进CMOS设计

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摘要

A modified architecture of a comparator to achieve high slew rate and boosted gain with an improvement in gain design error is introduced and investigated in this manuscript. It employs the conventional architecture of common-mode current feedback with the modified gain booster topology to increase gain, slew rate, and reduced gain error from the conventional structure. Observation from the simulation results concludes that the modified structure using 24 transistors shows power dissipation of 362.29 μW in 90 nm CMOS technology by deploying a supply voltage of 0.7 V, which is a 70% reduction as compared to the usual common mode feedback (CMFD) structure. The symmetric slew rate of 839.99 V/µs for both charging and discharging is obtained, which is 173% more than the standard CMFD structure. A reduction of 0.61% in gain error is achieved through this architecture. A SPICE simulation tool based on 90 nm CMOS technology is employed for executing the Monte Carlo simulations. A brief comparison with earlier CMFD structures shows improved performance parameters in terms of power consumption and slew rate with the reduction in gain error.
机译:在本手稿中引入并在提高增益设计误差方面进行了比较器的修改体系结构,以实现高压摆率和提升增益。它采用传统的共模电流反馈架构与修改的增益升压拓扑结构增加增益,转换率和传统结构的增益误差。从模拟结果观察得出结论:使用24晶体管的改进结构通过部署0.7V的电源电压显示90nm CMOS技术中的功耗为362.29μW,与通常的共模反馈(CMFD)相比,减少70%。结构体。获得充电和放电839.99V /μs的对称转换速率,比标准CMFD结构大173%。通过该架构实现了增益误差的0.61%。基于90nm CMOS技术的Spice仿真工具用于执行Monte Carlo仿真。与早期CMFD结构的简短比较显示了在功耗和压摆率方面的改进的性能参数,并随着增益误差的减少而变化。

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