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A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

机译:$ W $ -BAND晶圆主动负载拉动系统基于下转换技术

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摘要

A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open loop techniques in a cost effective way: load reflection coefficients Γ L as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith Chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-THz frequencies, and W-band MMIC design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-THz integrated circuits. First measure- ments performed on high performance InP double heterojunction bipolar transistors (DHBTs) and GaN high electron mobility transistors (HEMTs) are presented
机译:提出了一种新的W波段主动负载拉动系统。它是第一个通过主动循环利用频率转换技术实现94GHz负载的负载拉动系统。主动循环配置演示了许多优点,这些优点是以成本有效的方式克服W波段无源调谐器或传统的主动开环技术的典型限制:在94GHz的情况下,可以实现高达0.95的负载反射系数γL,因此,提供了史密斯图的几乎完全覆盖。设置的可能应用包括技术评估,Sub-THz频率的大信号设备模型验证,以及W波段MMIC设计和表征。在W波段的直接和准确的负载测量的可用性应在SUB-THZ集成电路开发中证明资产。在高性能InP双异质结双极晶体管(DHBT)和GaN高电子迁移晶体管(HEMT)上进行的第一个测量

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